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Triode (BJT)
Transistor type NPN
Emitter breakdown voltage (Vceo) 400V
Collector current (Ic) 8A
80 w power (Pd)
Collector cut-off current (Icbo) -
Collector emitter saturation voltage (VCE(SAT)@Ic,Ib) 3V@5A,1A
Dc current gain (hFE@Ic,Vce) 8@5A,5V
Characteristic frequency (fT) -
Operating temperature +150℃@(Tj)
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